Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

Abstract The properties of hybrid ferroelectric (FE) and antiFE (AFE) films integrated in a single capacitor stack is reported. lamination (4 × 5 nm) or (2 10 using an Alumina (Al 2 O 3 ) interlayer, material type (Si‐doped HfO (HSO) Zr doped (HZO)), precursor condition (TEMA‐Hf Hf/ZrCl 4 ), dopant concentration (Si Zr) are investigated for laminate properties. Optimized FE (higher P r lower fraction the monoclinic phase) observed at laminates compared to 20 nm film thickness. as FE‐FE, AFE‐FE, DE‐FE, DE‐AFE based explored terms output hysteresis , E c structural by X‐ray diffraction. AFE‐FE shows potential tailoring varying AFE phase. studied HSO HZO materials optimal content first layer while Si stabilize different degrees phase second layer. superposition systematic control. A model developed describe tailored via tuning stack. role hybrid‐stabilized phases inside with aim controlled optimized shape toward low power operation.